Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors
نویسندگان
چکیده
In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F₄TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F₄TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F₄TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F₄TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window.
منابع مشابه
Thickness dependence of mobility of pentacene planar bottom-contact organic thin-film transistors
We have fabricated planar bottom-contact organic thin-film transistors as a function of the thickness of the pentacene active layer. The highest mobility of the planar bottom-contact transistors is 0.47 cm/Vs with only a 7 nm pentacene active layer. Our planar bottom-contact transistors show much higher mobility than conventional bottom-contact counterparts and even higher than the reported mob...
متن کاملEffects of Au Source/Drain Thickness on Electrical Characteristics of Pentacene Thin-film Transistors
We investigate the electrical characteristics of top-contact pentacene thin-film transistors (TFTs) fabricated with various thicknesses of the Au source and the drain (S/D) electrodes, i.e., 20, 30, 50, 70, and 105 nm. Pentacene TFTs exhibit enhancements in the drain current and the fieldeffect mobility with increasing thickness of Au S/D electrodes up to 50 nm, after which the TFT performance ...
متن کاملSolution processed high performance pentacene thin-film transistors.
High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm(2) V(-1) s(-1) with an on/off ratio of 10(6).
متن کاملAir-flow navigated crystal growth for TIPS pentacene-based organic thin-film transistors
1566-1199/$ see front matter 2012 Elsevier B.V http://dx.doi.org/10.1016/j.orgel.2012.05.044 ⇑ Corresponding author. Tel.: +1 205 348 9930; fa E-mail address: [email protected] (D. Li). 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) is a promising active channel material of organic thin-film transistors (OTFTs) due to its solubility, stability, and high mobility. However, the grow...
متن کاملParasitic resistance in bottom-contact pentacene thin-film transistors that use water- dispersible polyaniline electrodes
Introduction Organic thin-film transistors (TFT) have received considerable attention due to promises of low manufacturing costs, ease of processibility, and extendibility to flexible circuits. The feasibility of organic TFTs has largely been demonstrated with devices that use metal source and drain electrodes, such as gold and palladium. Such devices, when fabricated in the bottom-contact (BC)...
متن کامل